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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PZT2907AT1/D PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. * NPN Complement is PZT2222AT1 * The SOT-223 package can be soldered using wave or reflow * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. * Available in 12 mm tape and reel Use PZT2907AT1 to order the 7 inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch/4000 unit reel. PZT2907AT1 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 1 2 3 4 BASE 1 3 EMITTER CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value - 60 - 60 - 5.0 - 600 1.5 12 - 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/C C THERMAL CHARACTERISTICS Thermal Resistance -- Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec DEVICE MARKING P2F ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = - 50 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCE = - 30 Vdc, VBE = 0.5 Vdc) Base-Emitter Cutoff Current (VCE = - 30 Vdc, VBE = - 0.5 Vdc) V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBEX - 60 - 60 - 5.0 -- -- -- -- -- -- -- -- -- -- -- -- -10 - 50 - 50 Vdc Vdc Vdc nAdc nAdc nAdc 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 4 Motorola Small-Signal (c) Motorola, Inc. 1996 Transistors, FETs and Diodes Device Data 1 PZT2907AT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(2) DC Current Gain (IC = - 0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (IC = - 500 mAdc, VCE = -10 Vdc) Collector-Emitter Saturation Voltages (IC = -150 mAdc, IB = -15 mAdc) (IC = - 500 mAdc, IB = - 50 mAdc) Base-Emitter Saturation Voltages (IC = -150 mAdc, IB = -15 mAdc) (IC = - 500 mAdc, IB = - 50 mAdc) hFE 75 100 100 100 50 VCE(sat) -- -- VBE(sat) -- -- -- -- -1.3 - 2.6 -- -- - 0.4 -1.6 Vdc -- -- -- -- -- -- -- -- 300 -- Vdc -- DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = - 50 mAdc, VCE = - 20 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = - 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cc Ce 200 -- -- -- -- -- -- 8.0 30 MHz pF pF SWITCHING TIMES Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. (VCC = - 6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) (VCC = - 30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) ton td tr toff ts tf -- -- -- -- -- -- -- -- -- -- -- -- 45 10 40 100 80 30 ns ns - 30 V INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns 0 - 16 V 200 ns 50 INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns 0 - 30 V 50 200 ns +15 V - 6.0 V 200 1.0 k 37 1.0 k TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data PZT2907AT1 TYPICAL ELECTRICAL CHARACTERISTICS 1000 TJ = 125C hFE, CURRENT GAIN TJ = 25C 100 TJ = - 55C f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 1000 100 VCE = - 20 V TJ = 25C 10 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 10 - 0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 3. DC Current Gain Figure 4. Current Gain Bandwidth Product -1.0 TJ = 25C - 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 CAPACITANCE (pF) 30 20 Ceb 10 7.0 5.0 Ccb - 0.6 VBE(on) @ VCE = -10 V - 0.4 - 0.2 VCE(sat) @ IC/IB = 10 0 - 0.1 - 0.2 - 0.5 -1.0 - 2.0 - 5.0 -10 - 20 - 50 -100 - 200 IC, COLLECTOR CURRENT (mA) - 500 3.0 2.0 - 0.1 - 0.2 - 0.3 - 0.5 - 0.7 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 REVERSE VOLTAGE (VOLTS) Figure 5. "ON" Voltage Figure 6. Capacitances Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 PZT2907AT1 INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE POWER DISSIPATION The power dissipation of the SOT-223 is a function of the pad size. These can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows. PD = TJ(max) - TA RJA the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 1.5 watts. PD = 150C - 25C 83.3C/W = 1.5 watts The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into The 83.3C/W for the SOT-223 package assumes the recommended collector pad area of 965 sq. mils on a glass epoxy printed circuit board to achieve a power dissipation of 1.5 watts. If space is at a premium, a more realistic approach is to use the device at a PD of 833 mW using the footprint shown. Using a board material such as Thermal Clad, a power dissipation of 1.6 watts can be achieved using the same footprint. MOUNTING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * The soldering temperature and time should not exceed * When shifting from preheating to soldering, the maximum * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. temperature gradient should be 5C or less. 260C for more than 10 seconds. MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.15 3.8 0.079 2.0 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 inches mm 0.091 2.3 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data PZT2907AT1 PACKAGE DIMENSIONS A F STYLE 1: PIN 1. 2. 3. 4. 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BASE COLLECTOR EMITTER COLLECTOR INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 S 1 2 3 B D L G J C 0.08 (0003) H M K CASE 318E-04 ISSUE H TO-261AA Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 PZT2907AT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 PZT2907AT1/D Motorola Small-Signal Transistors, FETs and Diodes Device Data *PZT2907AT1/D* |
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